Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask
- 1 November 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (11) , 1734-1736
- https://doi.org/10.1088/0268-1242/11/11/015
Abstract
We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.Keywords
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