Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser

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Abstract
Room‐temperature continuous‐wave (cw) lasing operation with a threshold current (Ith) of 3 mA and a pulsed Ith as low as 1.5 mA were achieved in mushroom structure surface‐ emitting lasers utilizing a 300 Å GaAs single quantum well as an active layer and an AlAs/Al0.1Ga0.9As multilayer as the top and the bottom distributed Bragg reflectors. A series resistance of 250 Ω was obtained on devices with an 8×8 μm2 active region using selective zinc diffusion. A differential quantum efficiency of 12%–20% and a maximum cw light output power exceeding 1 mW were achieved. The emission wavelength was 860 nm with a spectral linewidth of ∼0.5 Å.