Surface solidification and impurity segregation in amorphous silicon
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24) , 1651-1653
- https://doi.org/10.1063/1.96843
Abstract
Real-time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon-amorphous silicon interfaces—one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.Keywords
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