Evidence of a mobility edge in the second subband of anAs-GaAs heterojunction
- 15 October 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (11) , 7866-7869
- https://doi.org/10.1103/physrevb.38.7866
Abstract
We report on simultaneous measurements of mobility and Dingle temperature of a two-dimensional electron gas in an AlGaAs/GaAs heterojunction, the density of which is varied by means of infrared illumination. Detailed measurements reveal that the Dingle temperature of the first subband decreases abruptly as a function of density when the second subband becomes occupied but the accompanying drop in mobility occurs smoothly over a broader density interval. We interpret these results as indicating the existence of a mobility edge at the bottom of the second subband.Keywords
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