Variation of background impurities in AlxGa1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 20-25
- https://doi.org/10.1016/0022-0248(91)90940-7
Abstract
No abstract availableKeywords
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