Proposal for III-V ordered alloys with infrared band gaps
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2684-2686
- https://doi.org/10.1063/1.104807
Abstract
It is shown theoretically that the recently observed spontaneous ordering of III-V alloys that yields alternate monolayer (111) superlattices provides the opportunity for achieving infrared band gaps in systems such as (InAs)1(InSb)1 and (GaSb)1(InSb)1. A substantial reduction in the direct band gap is predicted to result from the L-point folding that repel the Γ band-edge states.Keywords
This publication has 17 references indexed in Scilit:
- Alternative small gap materials for IR detectionSemiconductor Science and Technology, 1990
- InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Structural phenomena in coherent epitaxial solidsJournal of Crystal Growth, 1989
- Long-wavelength infrared detectors based on strained InAs–Ga1−xInxSb type-II superlatticesJournal of Vacuum Science & Technology A, 1989
- Band gaps and spin-orbit splitting of ordered and disordered and alloysPhysical Review B, 1989
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987
- Experimental relation between cut-off wavelength and HgTe layer thickness for HgTe-CdTe superlatticesApplied Physics Letters, 1986
- Local-Density-Functional Calculation of the Pressure-Induced Metallization of BaSe and BaTePhysical Review Letters, 1985
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984