Interfacial recombination velocity determination in In 0.5Ga0.05P/GaAs
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3) , 1288-1292
- https://doi.org/10.1063/1.323773
Abstract
In this paper, we describe a one‐wafer technique for detrermining the interfacial recombination velocity at III–V heterojunctions. The recombination velocity is determined from the relationship between the injected‐carrier lifetime and the spacing between a p‐n homojunction and a heterojunction interface in a single‐heterojunction structure. The interfacial recombination velocity of an In0.5Ga0.5P/GaAS interface is found by this method to be 2×104 cm/sec, which is a factor of 3 larger than that of an Al0.5Ga0.5As/GaAs interface.This publication has 15 references indexed in Scilit:
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