Relation of resonant Raman line shape to electronic structure in quantum wells

We demonstrate the importance of energy-level structure and intersubband exciton-phonon scattering processes in GaAs/${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As quantum wells through analysis of the resonant Raman profile. In high-quality samples, the intersubband exciton–longitudinal-optical-phonon mechanism appears to dominate over impurity-mediated intrasubband processes.