Avalanche Breakdown in Epitaxial SiC p-n Junctions
- 1 April 1969
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (5) , 2320-2322
- https://doi.org/10.1063/1.1657980
Abstract
The reverse current‐voltage characteristics of epitaxial SiC p‐n junctions were investigated. After electrolytic etching the junctions showed sharp breakdown. The largest value found for the maximum field at breakdown is 5×106 V/cm. Microplasma pulses were observed analogous to but three orders‐of‐magnitude smaller than those hitherto reported for other materials.This publication has 5 references indexed in Scilit:
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