Characterization of the silicon-sapphire interface
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 439-445
- https://doi.org/10.1016/0022-0248(78)90473-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Three‐Dimensional Distribution of Twins in Epitaxial Silicon on SapphireJournal of the Electrochemical Society, 1977
- On the origin of leakage currents in silicon-on-sapphire MOS transistorsIEEE Transactions on Electron Devices, 1977
- Early growth of silicon on sapphire. I. Transmission electron microscopyJournal of Applied Physics, 1976
- R.F. sputtered silicon films on sapphireThin Solid Films, 1976
- The effect of rapid early growth on the physical and electrical properties of heteroepitaxial siliconJournal of Crystal Growth, 1975
- Silicon-on-Sapphire Epitaxy by Vacuum Sublimation: LEED–Auger Studies and Electronic Properties of the FilmsJournal of Vacuum Science and Technology, 1971