Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (4) , 577-585
- https://doi.org/10.1109/16.372057
Abstract
No abstract availableKeywords
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