The electronic structure of diamond-like amorphous carbon
- 25 April 1994
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 6 (17) , L239-L244
- https://doi.org/10.1088/0953-8984/6/17/002
Abstract
The electronic structure of diamond-like amorphous carbon is investigated using a tight-binding molecular dynamics method. The study shows that bonding and antibonding of pi -states associated with pairs and quartets of threefold 'defected atoms' embedded in the fourfold matrix yield a band gap of about 2 eV as observed in optical absorption experiments. These states are in general very localized. However, coupling between the threefold 'defects' can produce delocalized states near the band gap, which is essential for electronic conductivity in the material.Keywords
This publication has 18 references indexed in Scilit:
- Nitrogen doping of highly tetrahedral amorphous carbonPhysical Review B, 1993
- Raman scattering of laser-deposited amorphous carbonPhysical Review B, 1993
- Optical and electronic properties of amorphous diamondDiamond and Related Materials, 1993
- n-type doping of highly tetrahedral diamond-like amorphous carbonJournal of Physics: Condensed Matter, 1993
- Molecular-dynamics simulation of the growth of diamondlike films by energetic carbon-atom beamsPhysical Review Letters, 1992
- Structural properties of-bonded hydrogenated amorphous carbonPhysical Review B, 1991
- Neutron-scattering studies of the structure of highly tetrahedral amorphous diamondlike carbonPhysical Review Letters, 1991
- Compressive-stress-induced formation of thin-film tetrahedral amorphous carbonPhysical Review Letters, 1991
- Hard amorphous (diamond-like) carbonsProgress in Solid State Chemistry, 1991
- EELS analysis of vacuum arc-deposited diamond-like filmsPhilosophical Magazine Letters, 1988