High-performance 0.15-μm-gate-length pHEMTs enhanced with a low-temperature-grown GaAs buffer
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 445-448 vol.2
- https://doi.org/10.1109/mwsym.1995.405950
Abstract
An improved GaAs power pHEMT is presented. The device utilizes a low-temperature-grown (LTG) GaAs buffer layer instead of the conventional-buffer layers commonly used by pHEMT manufacturers. When contrasted with identical devices using a conventional buffer, these LTG-buffered pHEMTs have shown a 45% increase in channel breakdown voltage, a 12% increase in power output, and a record 63% power-added efficiency at 20 GHz.Keywords
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