Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach
- 1 July 1990
- journal article
- Published by Wiley in European Transactions on Telecommunications
- Vol. 1 (4) , 429-432
- https://doi.org/10.1002/ett.4460010410
Abstract
A study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.Keywords
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