Improved theory of the silicon p-n junction solar cell
- 1 January 1977
- journal article
- Published by American Institute of Aeronautics and Astronautics (AIAA) in Journal of Energy
- Vol. 1 (1) , 9-17
- https://doi.org/10.2514/3.47928
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Quantum efficiency of the internal photoelectric effect in silicon and germaniumJournal of Applied Physics, 1976
- Measurement of diffusion length in solar cellsJournal of Applied Physics, 1974
- Shallow phosphorus diffusion profiles in siliconProceedings of the IEEE, 1969
- Series resistance effects on solar cell measurementsAdvanced Energy Conversion, 1963
- Measurement of the hall effect and conductivity of super-pure siliconJournal of Physics and Chemistry of Solids, 1959
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Use ofJunctions for Solar Energy ConversionPhysical Review B, 1954
- Photovoltaic Effect inJunctionsPhysical Review B, 1954
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949