The (220) lattice spacing of silicon
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 44 (2) , 526-529
- https://doi.org/10.1109/19.377898
Abstract
Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtainedKeywords
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