A multi-state memory using resonant tunneling diode pair
- 1 January 1991
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 2924-2927 vol.5
- https://doi.org/10.1109/iscas.1991.176157
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A/D converter using InGaAs/InAlAs resonant-tunneling diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexityIEEE Transactions on Electron Devices, 1987
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applicationsIEEE Electron Device Letters, 1987
- Heterojunction double-barrier diodes for logic applicationsApplied Physics Letters, 1987
- The Prospects for Multivalued Logic: A Technology and Applications ViewIEEE Transactions on Computers, 1981