CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters

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Abstract
Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high‐energy electron‐diffraction studies on MgTe atomic deposition, together with x‐ray diffraction, high‐resolution transmission electron microscopy, and photoluminescence experiments on ALE‐grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc‐blende MgTe lattice parameter, aMgTe=6.420 ±0.005 Å, of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x‐ray‐diffraction and optical results.