Preparation and Electroluminescent Properties of p-n Junctions in Cd1-xMgxTe

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Abstract
Solid solutions of MgTe and CdTe were prepared throughout the range 0∼0.35 mole fraction MgTe. P-n junctions were formed from CdTe, Cd0.8Mg0.2Te and Cd0.65Mg0.35Te by diffusing P under Cd atmosphere for 10 to 72 hours and electroluminescent properties were investigated at room temperature. The diode with x=0.35 emitted visible red light (∼6800 Å) with external quantum efficiency of 2×10-6 for 10 mA at 300°K. The emission spectra of Cd1-x Mg x Te diodes (x\neweq0) are similar to the spectra due to Schoen-Klasens type transition as supposed in CdTe diodes. Capacitance measurements, current-voltage characteristics and transient effect measurements imply that, at high current density (∼100 A/cm2), diffusion current rather than the recombination current in the space-charge region relates to radiative recombination.