A re-examination of practical performance limits of scaled n-channel and ϱ-channel MOS devices for VLSI
- 31 October 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (10) , 969-986
- https://doi.org/10.1016/0038-1101(83)90072-2
Abstract
No abstract availableKeywords
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