Direct measurement of the polarization-dependent absorption and saturation in an InGaAs/InGaAsP single quantum well

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Abstract
A simple technique has been used to measure the two polarization-dependent absorption edges in a single quantum well around 1.5 μm. The broadband spontaneous emission of an AR-coated semiconductor laser chip was used as the spatially coherent light source in conjunction with a grating spectrometer. Absorption edges for both TE and TM polarized light have been measured in single quantum well InGaAs/InGaAsP waveguides and modeled by the k⋅p method. By pumping the devices with a 1.3 μm semiconductor laser, absorption saturation was also studied. The resulting changes in the refractive index were calculated from a Kramers–Kronig transformation of the absorption changes.