Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells

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Abstract
Photoreflectance and photoluminescence were used to study GaAs/AlGaAs quantum wells (QWs) as they were partially intermixed using SiO2 capped rapid thermal annealing. As the annealing temperature was increased, the experimental photoreflectance results showed spectral features moving to higher energies and merging to form broad peaks. This is explained by changes in the shapes of the originally square wells, which result in a convergence of their subbands around certain energies. The interpretation of these changes showed that the partially intermixed QWs were well described by an error-function profile.