Selective carrier injection into V-groove quantum wires
- 16 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2959-2961
- https://doi.org/10.1063/1.122643
Abstract
We have observed selective carrier injection into GaAs/AlGaAs V-groove quantum wires (QWRs) via self-ordered vertical quantum wells (VQWs). Room-temperature I–V characteristics of QWR diodes show a turn-on voltage lower by 0.2 V as compared with planar QW diodes, consistent with the band-gap reduction of 0.2 eV at the vertical QW. This selective injection results in narrow linewidth electroluminescence (∼5 nm at 300 K) emanating exclusively from the QWR from 10 K up to 300 K.Keywords
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