Characterization of SI/SiO2 Interfaces Using Tem Lattice Imaging and X-Ray Micro Diffraction Techniques
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Observation of Defects in Crystalline Polymers by HREMMRS Bulletin, 1987
- Strain broadening of the dangling-bond resonance at the (111)Si-interfacePhysical Review B, 1986
- Stress in polycrystalline and amorphous silicon thin filmsJournal of Applied Physics, 1983
- Experimental High-Resolution Electron MicroscopyPhysics Today, 1981