Internal strain parameter of silicon and GaAs and planar force constants
- 30 November 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 44 (8) , 1205-1207
- https://doi.org/10.1016/0038-1098(82)91086-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A uniaxial stress apparatus for single-crystal X-ray diffraction on a four-circle diffractometer: application to silicon and diamondJournal of Applied Crystallography, 1982
- Internal strain in diamond structure elements: a survey of theoretical approachesJournal of Physics C: Solid State Physics, 1982
- Ab initiocalculation of the phonon dispersion relation: Application to SiPhysical Review B, 1982
- Ab InitioForce Constants of GaAs: A New Approach to Calculation of Phonons and Dielectric PropertiesPhysical Review Letters, 1982
- Internal Strains and Raman‐Active Optical PhononsPhysica Status Solidi (b), 1981
- Internal strain of GaAs. I. Longitudinal caseActa Crystallographica Section A, 1975
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Internal strain in elastically strained germanium and siliconZeitschrift für Physik B Condensed Matter, 1965
- Internal strain in elastically strained germanium and siliconZeitschrift für Physik B Condensed Matter, 1964
- Deformation Potentials in Silicon. I. Uniaxial StrainPhysical Review B, 1962