Carrier diffusion and recombination influencing gain and current profiles in planar injection lasers
- 1 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (5) , 1293-1297
- https://doi.org/10.1063/1.334134
Abstract
Carrier diffusion and spontaneous recombination processes are analyzed within the framework of a consistent treatment for lateral current spreading in injection lasers. The formalism allows analysis of the above-threshold behavior of the device and results of relevance to mode stability properties are obtained. The extension of the model to the analysis of three-dimensional effects following from longitudinal nonuniformities in the laser is briefly considered.This publication has 12 references indexed in Scilit:
- Above-threshold current leakage effects in stripe-geometry injection lasersOptical and Quantum Electronics, 1983
- Prediction of transverse-mode selection in double heterojunction lasers by an ambipolar excess carrier diffusion solutionJournal of Applied Physics, 1983
- Role of the conductivity of the confining layers in DH-laser spatial hole burning effectsIEEE Journal of Quantum Electronics, 1982
- Far field asymmetry in narrow stripe gain-guided lasersIEEE Journal of Quantum Electronics, 1982
- An analytical solution of the lateral current spreading and diffusion problem in narrow oxide stripe (GaAl)As/GaAs DH lasersIEEE Journal of Quantum Electronics, 1982
- Theoretical analysis of current spreading in stripe-geometry injection lasersIEE Proceedings I Solid State and Electron Devices, 1982
- Stability analysis of transverse modes in stripe - geometry injection lasersIEE Proceedings I Solid State and Electron Devices, 1981
- Current-crowded carrier confinement in double-heterostructure lasersJournal of Applied Physics, 1980
- Semiconductor laser analysis: general method for characterising devices of various cross-sectional geometriesIEE Proceedings I Solid State and Electron Devices, 1980
- Theory of the double heterostructure laser: III. Self-consistent calculations of the electrical and optical characteristicsOptical and Quantum Electronics, 1976