Prediction of transverse-mode selection in double heterojunction lasers by an ambipolar excess carrier diffusion solution

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Abstract
Transverse-mode selection is characterized for GaAs/AlGaAs double heterojunction lasers from optical field and electron/hole interaction. The electron/hole distribution determined from a solution of the ambipolar diffusion equation provides the necessary information about gain/mode coupling to predict the current at threshold. Lasing power out versus current solutions provide information about internal differential quantum efficiency. Theory is matched to experiment for a multimode laser with one heterojunction having a very small index step. It is found that the laser’s characteristics over a temperature and current range are predicted by adjusting the active-layer refractive index as determined from far-field measurements.