Low temperature solid phase crystallization of amorphous silicon using (Au + Ni) solution
- 31 May 1998
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 106 (6) , 325-328
- https://doi.org/10.1016/s0038-1098(98)00064-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Formation of Ni silicide from Ni(Au) films on (111)SiJournal of Applied Physics, 1996
- Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin filmsJournal of Applied Physics, 1993
- Fractal formation in a-Si:H/Ag/a-Si:H films after annealingJournal of Applied Physics, 1993
- In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous siliconApplied Physics Letters, 1992
- In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrixJournal of Applied Physics, 1991
- Al induced crystallization of a-SiJournal of Applied Physics, 1991
- Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin filmsJournal of Materials Research, 1990
- Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1990
- Nucleation of a new phase from the interaction of two adjacent phases: Some silicidesJournal of Materials Research, 1988
- Crystallization of amorphous silicon during thin-film gold reactionJournal of Applied Physics, 1987