In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon
- 13 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 225-227
- https://doi.org/10.1063/1.106971
Abstract
The silicide‐mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel‐implanted amorphous silicon occurred at ∼500 °C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to 〈111〉 directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion‐controlled mechanism for the enhanced crystallization rate was determined.Keywords
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