Proposal of and Numerical Simulation of Hg1-xCdxTe Heterojunction Bipolar Transistors
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3R)
- https://doi.org/10.1143/jjap.25.444
Abstract
A novel heterojunction bipolar transistor (HBT) made from Hg1-x Cd x Te is proposed. This narrow-gap material permits an HBT very low voltage operation at low temperature, which in turn gives very high speed switching and extremely low power consumption. A numerical 1-dimensional analysis of a typical HBT structure indicates that it can develop a strong nonlinearity at a small voltage and that a cutoff frequency of 200 GHz is attainable. The estimated power consumption of an (HgCd)Te ECL gate is several times smaller and the power-delay product is one order of magnitude smaller than that of an Si or an (AlGa)As ECL gate.Keywords
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