A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications
- 1 January 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at f/sub T//f/sub max/ = 209/248 GHz (70nm) and f/sub T//f/sub max/ = 166/277 GHz (80nm) with F/sub min/ at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.Keywords
This publication has 3 references indexed in Scilit:
- Noise performance of a low base resistance 200 GHz SiGe technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SiGe HBTs with cut-off frequency of 350 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002