A 256K RAM fabricated with molybdenum-polysilicon technology
- 1 January 1980
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXIII, 234-235
- https://doi.org/10.1109/isscc.1980.1156098
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- A high speed molybdenum gate MOS RAMIEEE Journal of Solid-State Circuits, 1978