High field/high temperature performance of semi-insulating silicon carbide
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1392-1395
- https://doi.org/10.1016/s0925-9635(97)00103-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- High field activation of micropipes in high resistivity silicon carbideJournal of Electronic Materials, 1996
- Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiCApplied Physics Letters, 1996
- Semi-insulating 6H–SiC grown by physical vapor transportApplied Physics Letters, 1995
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Boron-related deep centers in 6H-SiCApplied Physics A, 1990
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938