Far-infrared intersubband transitions in a two-dimensional GaAs/(Al,Ga)As hole system: Direct comparison of experiment and calculation

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Abstract
Measured far‐infrared (FIR) intersubband absorption in two p‐type modulation‐doped GaAs/(Al,Ga)As multiquantum wells is compared with k⋅p modeling of the two‐dimensional heavy‐ and light‐hole (HH, LH) subband structure. Strong absorption for both HH1–HH2 and HH1–LH1 transitions is found. Self‐consistent modeling was performed within a 4×4 k⋅p scheme for heavy and light holes. There is an excellent agreement between the theoretical and experimental FIR intersubband transitions at k∥=0 and at the Fermi wave vector kf.