Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 239-243
- https://doi.org/10.1016/s0921-5107(98)00510-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Silicon Carbide, III-Nitrides and Related MaterialsPublished by Trans Tech Publications, Ltd. ,1998
- Auger recombination in 4H-SiC: Unusual temperature behaviorApplied Physics Letters, 1997
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985