Effect of dopant incorporation on structural and electrical properties of sprayed SnO2:Sb films

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Abstract
Antimony‐doped tin oxide films were deposited by spray pyrolysis technique. The effect of antimony doping on structural and electrical properties was investigated in detail using the x‐ray diffraction technique and room‐temperature Hall measurements. Antimony doping did not affect the preferred growth along [200] to a considerable extent. These results were analyzed on the basis of structure factor calculations. From the Hall measurements, the lowest electrical resistivity, i.e., 5.2×10−4 Ω cm was observed for the films with a doping level of 2.3 at. % in the solution. This value of electrical resistivity is the lowest reported so far in the case of spray deposited antimony‐doped SnO2 films. The grain boundary and ionized impurity scattering were observed to be prevalent in governing the electronic transport of lightly and heavily doped films, respectively.