A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights
- 1 January 1998
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (1) , 585-587
- https://doi.org/10.1063/1.366644
Abstract
We report on a systematic study of a set of GaAs/AlGaAs -type quantum well infrared photodetectors with varying barrier heights. The detector cutoff wavelength decreases with increasing barrier height. Experimental photoresponse spectra are in good agreement with calculated ground-state to continuum absorption spectra, based on a multiband envelope-function model. The measured dark current decreases with increasing barrier height. An estimate of the low-field dark current gives good agreement with the measured dark current.
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