Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor
Open Access
- 1 October 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (10) , 1119-1123
- https://doi.org/10.1016/0038-1101(91)90109-c
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Material properties of p-type GaAs at large dopingsApplied Physics Letters, 1990
- Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1985
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Theoretical current gain of a cylindrical mesa transistorSolid-State Electronics, 1961