A new monitor to predict hot-carrier damage of PMOS transistors
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFETsIEEE Transactions on Electron Devices, 1988
- Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET'sIEEE Transactions on Electron Devices, 1987
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983