Reentry from the 2D Metallic into a Weakly Localized Phase for High Electron Densities in Si-MOS Structures

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  • 11 December 1998
Abstract
We found that the 2D electron system in high mobility Si-MOS structures exhibits a reentrant transition into a localized phase as the carrier density increases. The low-temperature dependence of the conductivity was found to have delocalizing slope (dG/dT <0) only in a limited range of carrier densities, 0.8x10^{11} ~ n_{c,1} < n < n_{c,2} ~ 20x10^{11}cm^{-2}. As density increases above n_{c,2}, the slope of the low-temperature dependence changes sign, indicating a weakly localized state. The second critical density and the corresponding conductivity value G_{c,2} ~ 130e^2/h set an upper limit on the existence range of the metallic state in Si-MOS.

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