Maximum Metallic Conductivity in Si-MOS Structures

Preprint

23 December 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9812183

Abstract

We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.

Keywords

MAXIMUM METALLIC CONDUCTIVITY
METALLIC CONDUCTIVITY
SI MOS STRUCTURES
ELECTRON SYSTEM
MOBILITIES

All Related Versions

Version 1, 1998-12-11, ArXiv
Version 2, 1998-12-23, ArXiv
Published version: Physical Review B, 60 (4), R2154.

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