On the impurity distribution in a thin silicon rod grown by pulling from a melt on pedestal
- 1 April 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (2) , 428-431
- https://doi.org/10.1016/0022-0248(82)90499-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth of niobium single crystals by a pedestal methodJournal of Crystal Growth, 1974
- Growth of niobium single crystals by Czochralski technique using the “pedestal” methodJournal of Crystal Growth, 1973
- Growth of 40 mm diameter silicon crystals by a pedestal technique using electron beam heatingJournal of Crystal Growth, 1972
- Growth of Silicon Bicrystals by the Dash Pedestal-MethodJournal of the Electrochemical Society, 1962
- Silicon Crystals Free of DislocationsJournal of Applied Physics, 1958