Growth of 40 mm diameter silicon crystals by a pedestal technique using electron beam heating
- 1 April 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 12 (4) , 281-287
- https://doi.org/10.1016/0022-0248(72)90298-9
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Annealing behavior and etching phenomena of microdefects in dislocation-free float-zone siliconPhysica Status Solidi (a), 1971
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- Silicon Crystals Free of DislocationsJournal of Applied Physics, 1958