Annealing behavior and etching phenomena of microdefects in dislocation-free float-zone silicon
- 16 October 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 7 (2) , 577-582
- https://doi.org/10.1002/pssa.2210070232
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- The Influence of Carbon on Precipitation of Copper in Silicon Single CrystalsPhysica Status Solidi (b), 1967
- Etch Pits Observed in Dislocation-Free Silicon CrystalsJapanese Journal of Applied Physics, 1966
- Untersuchungen zum Ausscheidungsmechanismus von Kupfer in SiliziumPhysica Status Solidi (b), 1964
- Study of Copper Precipitation Behavior in Silicon Single CrystalsJournal of the Electrochemical Society, 1961