Use of surface grooves to control ordering in GaAsP
- 16 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25) , 3258-3260
- https://doi.org/10.1063/1.105750
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Surface-induced ordering in GaInPPhysical Review Letters, 1991
- High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substratesJournal of Crystal Growth, 1991
- Ordered structures and metastable alloys grown by OMVPEJournal of Crystal Growth, 1989
- Disappearance of long-range ordering in Ga 0.5 In 0.5 P with tilting of substrate from (100) towards (511)AElectronics Letters, 1989
- All current-mode frequency selective circuitsElectronics Letters, 1989
- Band gaps and spin-orbit splitting of ordered and disordered and alloysPhysical Review B, 1989
- Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phaseJournal of Crystal Growth, 1988
- Growth and characterization of InAs/GaAs monolayer structuresJournal of Crystal Growth, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985