Temperature dependence of the direct band gap of InxGa1xAs (x=0.06 and 0.15)

Abstract
Photoreflectance has been used to measure the direct band gap of Inx Ga1xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function.