Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
- 19 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (12) , 1080-1082
- https://doi.org/10.1063/1.100027
Abstract
We report a modulation spectroscopy experiment on GaAs and Ga0.82Al0.18As at elevated temperatures. Using the contactless electromodulation method of photoreflectance, the direct gaps (E0) of these materials have been observed from 77 K to 600 °C. The latter temperature is comparable to molecular beam expitaxy, metalorganic chemical vapor deposition, growth temperatures, etc. Our results are at the highest temperature yet reported for E0 (GaAs) in a reflectance experiment and the first observation of E0 (Ga1−xAlxAs) at elevated temperatures. From the latter, the Varshni coefficients [Physica 3 4, 149 (1967)] for Ga0.82Al0.18As were determined.Keywords
This publication has 14 references indexed in Scilit:
- Generalized complex Lorenz system for plasmas and the transition to turbulencePhysical Review A, 1988
- Reflectance line shapes from GaAs/Ga1−xAlxAs quantum well structuresApplied Physics Letters, 1988
- Interband critical points of GaAs and their temperature dependencePhysical Review B, 1987
- A theory for the electroreflectance spectra of quantum well structuresJournal of Physics C: Solid State Physics, 1986
- Temperature dependence of the fundamental energy gap in GaAsSolid State Communications, 1986
- Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growthJournal of Vacuum Science & Technology B, 1986
- Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic EllipsometryPhysical Review Letters, 1984
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967