Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry

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Abstract
It is shown that, because of the electrostriction and polarization of defects by the modulating electric field, electroreflectance spectra are more affected by defects than are third-derivative spectra from ellipsometry data. The theory of electroreflectance is generalized to include these effects. Plasticity and long-range strains are shown to lead to a first-derivative line shape and polarizable defects to a second-derivative line shape. For defect-rich samples these new terms dominate the usual third-derivative line shape.