Evidence of stress-mediated Hg migration in Hg1−xCdxTe
- 15 February 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (4) , 374-376
- https://doi.org/10.1063/1.93944
Abstract
Photoemission results from some 〈110〉 cleaved surfaces of Hg1−xCdxTe indicate that the Fermi level is pinned suggesting that while the bulk of the material is p type the area stressed during cleavage has been converted to n type. Electrolyte electroreflectance (EER) measurement confirmed the n‐type character of the cleaved surface and showed that the alloy composition x at the surface, after cleavage, is high (x=0.22) compared to the bulk value (x=0.185). The high x value associated with the n character indicates that under stress the Hg migrates, at least partially, via the formation of donor defects. The defect density is reflected in the EER linewidth.Keywords
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