Observation of thermal carrier generation in buried channel charge coupled devices
- 1 January 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1) , 546-547
- https://doi.org/10.1063/1.325650
Abstract
The thermal carrier generation in a buried channel charge coupled device has been observed experimentally. The generation rate decreases dramatically as the potential well fills, compared to the same characteristic in a surface channel charge coupled device.This publication has 2 references indexed in Scilit:
- Observation of Thermally Generated Carrier in Charge Coupled DevicesJapanese Journal of Applied Physics, 1977
- Thermal carrier generation in charge-coupled devicesIEEE Transactions on Electron Devices, 1975